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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM3055LAPAPT CURRENT 12 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. .280 (7.10) .238 (6.05) .220 (5.59) .195 (4.95) TO-252A .094 (2.40) .087 (2.20) .035 (0.89) .018 (0.45) * N-Channel Enhancement (1) (3) (2) .417 (10.6) .346 (8.80) CONSTRUCTION .261 (6.63) .213 (5.40) .035 (0.90) .025 (0.64) .102 (2.59) .078 (1.98) 1 Gate .024 (0.61) .016 (0.40) CIRCUIT (1) G D (3) 2 Source 3 Drain( Heat Sink ) S (2) Dimensions in inches and (millimeters) TO-252A Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM3055LAPAPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 V V 20 12 ID - Pulsed PD TJ TSTG (Note 3) A 45 31 -55 to 150 -55 to 150 W C C Maximum Power Dissipation at Tc = 25 C Operating Temperature Range Storage Temperature Range Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM3055LAPAPT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 30 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=10V, ID=12A VGS=5V, ID=12A 0.8 45 70 20 2.5 60 V m 90 S Forward Transconductance VDS =10V, ID = 12A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=15V, ID=6A VGS=10V V DD= 15V ID =12A , VGS = 10 V RGEN= 2.5 10 2 3 12 5 14 14 15 nC ton 25 15 30 30 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS = 12A , VGS = 0 V 0.9 12 1.3 A V |
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